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NTE196 参数 Datasheet PDF下载

NTE196图片预览
型号: NTE196
PDF下载: 下载PDF文件 查看货源
内容描述: 硅互补晶体管音频输出功率和中功率开关 [Silicon Complementary Transistors Audio Power Output and Medium Power Switching]
分类和应用: 晶体开关晶体管功率双极晶体管局域网
文件页数/大小: 2 页 / 27 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE196的Datasheet PDF文件第2页  
NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
D
DC Current Gain Specified to 7 Amps: h
FE
= 2.3 Min @ I
C
= 7A
D
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 70V Min
D
High Current–Gain Bandwidth Product:
f
T
= 4MHz Min @ I
C
= 500mA (NTE196)
= 10MHz Min @ I
C
= 500mA (NTE197)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min
70
Typ Max Unit
1.0
100
2.0
1.0
V
mA
µA
mA
mA
Collector–Emitter Sustaining Voltage V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
Collector Cutoff Current
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 60V, I
B
= 0
V
CE
= 80V, V
EB(off)
= 1.5V
V
CE
= 80V, V
EB(off)
= 1.5V, T
C
= +150°C
V
BE
= 5V, I
C
= 0
Note 1. Pulse Test: Pulse Width
300µs, Duty Cycle
2%.