NTE214
Silicon NPN Transistor
Darlington Driver
Description:
The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D
High DC Current Gain
D
Large Current Capacity and Wide ASO
D
Low Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation (T
A
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
t
on
t
stg
t
f
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 5A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 10mA
I
C
= 5A, I
B
= 10mA
I
C
= 5mA, I
E
= 0
V
CC
= 20V, V
BE
= –5V,
500I
B1
= –500I
B2
= I
C
= 5A,
PW = 50µs, Duty Cycle
≤
1%
Min
–
–
2000
–
–
–
70
60
–
–
–
Typ
–
–
5000
20
0.9
–
–
–
0.6
3.0
1.8
Max Unit
0.1
3.0
–
–
1.5
2.0
–
–
–
–
–
MHz
V
V
V
V
µs
µs
µs
mA
mA
V
(BR)CEO
I
C
= 50mA, R
BE
=
∞
NTE [ NTE ELECTRONICS ]
