NTE222
Field Effect Transistor
Dual Gate N–Channel MOSFET
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10mA
Forward Gate Current, I
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Drain–Source Breakdown Voltage
Gate 1–Source Breakdown Voltage
Gate 2–Source Breakdown Voltage
Gate 1 Leakage Current
Gate 2 Leakage Current
Gate 1 to Source Cutoff Voltage
Gate 2 to Source Cutoff Voltage
ON Characteristics
(Note 2)
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
|Y
fs
|
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V,
f = 1kHz, Note 3
10
–
22
mmhos
I
DSS
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V
6
–
30
mA
V
(BR)DSX
I
D
= 10µA, V
G1
= V
G2
= –5V
25
±6
±6
–
–
–0.5
–0.2
–
–
–
–
–
–
–
–
±30
±30
±10
±10
–4.0
–4.0
V
V
V
nA
nA
V
V
V
(BR)G1SO
I
G1
=
±10mA,
Note 1
V
(BR)G2SO
I
G2
=
±10mA,
Note 1
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
V
G1S
=
±5V,
V
G2S
= V
DS
= 0
V
G2S
=
±5V,
V
G1S
= V
DS
= 0
V
DS
= 15V, V
G2S
= 4V, I
D
= 20µA
V
DS
= 15V, V
G1S
= 0V, I
D
= 20µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle
≤
2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
NTE [ NTE ELECTRONICS ]
