NTE229 参数 Datasheet PDF下载

NTE229

Silicon NPN Transistor

VHF Oscillator, Mixer, IF Amp

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Power Dissipation (T

A

= +25°C), P

T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 1/16”

±1/32”

from case, 10sec), T

L

. . . . . . . . . . . . . . . +230°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Base–Emitter ON Voltage

Current Gain–Bandwidth Product

Power Gain

Collector–Base Capacitance

Noise Figure

Symbol

Test Conditions

Min

30

3

–

30

30

–

500

28

–

–

Typ Max

–

–

–

–

–

–

–

–

–

–

–

–

200

225

–

0.85

–

–

0.4

6

V

V

MHz

dB

pF

dB

Unit

V

V

nA

V

(BR)CBO

I

C

= 100µA, I

E

= 0

V

(BR)EBO

I

E

= 100µA, I

C

= 0

I

CBO

h

FE

V

BE(on)

f

T

G

pe

C

cb

NF

V

CB

= 30V, I

E

= 0

I

C

= 5mA, V

CE

= 10V

I

C

= 5mA, V

CE

= 10V

I

C

= 5mA, V

CE

= 10V,

f = 100MHz

V

CC

= 12V, V

BB

= 2.5V,

f = 45MHz

I

E

= 0, V

CB

= 15V, f = 1MHz

V

CC

= 12V, f = 45MHz

Collector–Emitter Sustaining Voltage V

CEO(sus)

I

C

= 1mA, I

B

= 0