NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
D
High Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 160V
D
High DC Current Gain: h
FE
= 35 Typ @ I
C
= 8A
D
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Note 1. Pulse Test: Pulse Width
≤
5ms, Duty Cycle
≥
10%.
Electrical Charactertistics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector–Emitter Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 2
I
CEX
I
CEO
Emitter–Base Cutoff Current
Collector–Base Cutoff Current
I
EBO
I
CBO
V
CE
= 160V, V
EB(off)
= 1.5V
V
CE
= 160V, V
EB9off)
= 1.5V, T
C
= +150°C
V
CE
= 80V, I
B
= 0
V
BE
= 7V, I
C
= 0
V
CB
= 160V, I
E
= 0
160
–
–
–
–
–
–
–
–
–
–
–
–
0.1
5.0
750
1.0
750
V
mA
mA
µA
mA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≥
2%.
NTE [ NTE ELECTRONICS ]
