NTE2309
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D
High Breakdown Voltage
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T
A
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pules test: Pulse Width
≤
300µs, Duty Cycle
≤
10%.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
C
ob
Test Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.4A
V
CE
= 5V, I
C
= 2A
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
V
CE
= 10V, I
C
= 0.4A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, f = 1MHz
Min
–
–
10
8
–
–
–
–
Typ
–
–
–
–
15
–
–
120
Max
10
10
–
–
–
2.0
1.5
–
MHz
V
V
pF
Unit
µA
µA