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NTE231 参数 Datasheet PDF下载

NTE231图片预览
型号: NTE231
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内容描述: 可控硅整流器( SCR)电视机偏转电路 [Silicon Controlled Rectifier (SCR) TV Deflection Circuit]
分类和应用: 可控硅整流器电视
文件页数/大小: 2 页 / 26 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE231的Datasheet PDF文件第2页  
NTE231
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D
CTV 110° – CRT Horizontal Deflection
D
Comutater Switch
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (T
J
= +100°C), V
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Non–Repetitive Peak Forward Voltage (T
J
= +100°C), V
DSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On–State Current (Note 1), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Average On–State Current (Note 1), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Surge Current (Note 1), I
TSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Critical Rate–of–Rise of On–State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Peak Gate Power Dissipation (Note 2), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Average Gate Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Minimum Peak Reverse Gate Voltage, V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. Single Phase, Half Sine Wave at 50Hz, T
C
= +60°C
Note 2. 10µs duration
Electrical Characteristics:
Parameter
Peak Off–State Current
Peak On–State Voltage
DC Gate Trigger Current
Symbol
I
DRM
V
TM
I
GT
Test Conditions
V
DRM
= 700V, T
J
= +100°C
I
TM
= 20A, T
C
= +25°C
T
C
= –40°C V
D
= 6V, R
L
= 10Ω
T
C
= +25°C
Min
Typ
Max
1.5
3.0
75
45
Unit
mA
V
mA
mA