欢迎访问ic37.com |
会员登录 免费注册
发布采购

NTE2344 参数 Datasheet PDF下载

NTE2344图片预览
型号: NTE2344
PDF下载: 下载PDF文件 查看货源
内容描述: 硅互补达林顿晶体管功率放大器,开关 [Silicon Complementary Transistors Darlington Power Amp, Switch]
分类和应用: 晶体开关放大器晶体管达林顿晶体管功率放大器
文件页数/大小: 2 页 / 26 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE2344的Datasheet PDF文件第2页  
NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
Features:
D
Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transistion Frequency
Collector Output Capacitance
V
CE(sat)
V
BE
f
T
C
ob
Test Conditions
V
CB
= 200V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 8A
I
C
= 10A, I
B
= 1A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
200
55
35
Typ
60
1.5
1.0
25
470
Max
5.0
5.0
160
3.0
1.5
V
V
MHz
pF
Unit
µA
µA
V
V
(BR)CEO
I
C
= 50mA, I
B
= 0