NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack-
age designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (T
A
= +25°C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Power Dissipation (T
C
= +25°C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16”
±1/32”
from case, 10sec), T
L
. . . . . . . . . . . . . . . +230°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Collector–Emitter Breakdown Voltage V
(BR)CES
I
C
= 100µA, I
B
= 0
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
I
CBO
I
EBO
h
FE
V
CB
= 30V, I
E
= 0
V
BE
= 8V, I
C
= 0
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
V
CE(sat)
I
C
= 100mA, I
B
= 0.1mA
V
BE(on)
I
C
= 100mA, V
CE
= 5V, Note 1
30
–
–
50k
20k
–
–
–
–
–
–
–
0.9
–
100
100
–
–
1.5
V
V
V
nA
nA
Symbol
Test Conditions
Min
Typ Max Unit
1.45 2.00
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
NTE [ NTE ELECTRONICS ]
