NTE233 参数 Datasheet PDF下载

NTE233

Silicon NPN Transistor

Video IF, Oscillator

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Total Power Dissipation (T

A

= +25°C), P

T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 1/16”

±1/32”

from case, 10sec), T

L

. . . . . . . . . . . . . . . +230°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Pulse Current Gain

Collector Saturation Voltage

Current Gain–Bandwidth Product

Power Gain, Fixed Neutralization

Reverse Transfer Capacitance

Output Admittance, Input Short

Circuit

Symbol

Test Conditions

Min

30

3

–

–

20

–

30

300

25

0.6

30

Typ Max

–

–

–

–

–

0.6

–

–

–

–

–

–

–

50

1

100

–

–

700

–

1.1

V

V

MHz

dB

pF

Unit

V

V

nA

µA

V

(BR)CBO

I

C

= 100µA, I

E

= 0

V

(BR)EBO

I

E

= 10µA, I

C

= 0

I

CBO

I

CEO

h

FE

V

CE(sat)

f

T

G

pe

C

re

g

oe

V

CB

= 30V, I

E

= 0

V

CE

= 30V, I

B

= 0

I

C

= 10mA, V

CE

= 10V, Note 1

I

C

= 20mA, I

B

= 0.1mA, Note 1

I

C

= 10mA, V

CE

= 10V,

f = 100MHz

I

C

= 10mA, V

CE

= 10V,

f = 45MHz

I

E

= 0, V

CB

= 10V, f

≤

1MHz

I

C

= 10mA, V

CE

= 10V,

f = 45MHz

Collector–Emitter Sustaining Voltage V

CEO(sus)

I

C

= 1mA, I

B

= 0, Note 1

200

µmho

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.