NTE2359 (NPN) & NTE2360 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In 47k Bias Resistors
Features:
D
Built–In Bias Resistor (R
1
= 47kΩ, R
2
= 47kΩ)
D
Small–Sized Package (TO92 type)
Applications:
D
Switching Circuit
D
Inverter
D
Interface Circuit
D
Driver
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
NTE2359
NTE2360
Output Capacitance
NTE2359
NTE2360
C
ob
V
CB
= 10V, f = 1MHz
–
–
3.7
5.5
–
–
pF
pF
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
–
–
250
200
–
–
MHz
MHz
Min
–
–
30
50
Typ
–
–
53
–
Max
0.1
0.5
80
–
Unit
µA
µA
µA
NTE [ NTE ELECTRONICS ]
