NTE235
Silicon NPN Transistor
Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage (R
BE
= 150Ω), V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, P
C
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
T
C
= +50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
C
=+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
80
75
5
–
–
25
–
–
100
–
4.0
60
Typ Max Unit
–
–
–
–
–
–
0.15
0.9
150
45
–
–
–
–
–
10
10
200
0.6
1.2
–
60
–
–
V
V
MHz
pF
W
%
V
V
V
µA
µA
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 100µA, I
B
= 0
Collector–Emitter Breakdown Voltage V
(BR)CER
I
C
= 1mA, R
BE
= 150Ω
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Output Capacitance
Power Output
Collector Efficiency
V
(BR)EBO
I
E
= 100µA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
P
O
η
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 500mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 10V, f = 1MHz
V
CC
= 12V, P
in
= 0.2W,
f = 27MHz
NTE [ NTE ELECTRONICS ]
