NTE2377
MOSFET
N–Channel,
Enhancement Mode, High Speed
Description:
The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D
Low ON–State Resistance
D
Very High–Speed Switching
D
Converters
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Drain–Source Voltage, V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage, V
GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
DC Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulsed Drain Current (Note 1), I
DP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Allowable Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Channel Temperature, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width
≤
10µs, Duty Cycle
≤
1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Source Leakage Current
Cutoff Voltage
Static Drain–Source On Resistance
Forward Transconductance
Symbol
Test Conditions
Min
900
–
–
2
–
2.5
Typ
–
–
–
–
1.2
5.0
Max
–
1.0
±100
3
1.6
–
Unit
V
mA
nA
V
Ω
mho
V
(BR)DSS
I
D
= 1mA, V
GS
= 0
I
DSS
I
GSS
V
GS(off)
R
DS(on)
g
fs
V
GS
= 0, V
DS
= Max Rating
V
DS
= 0, V
GS
=
±30V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 4A
V
DS
= 20V, I
D
= 4A
NTE [ NTE ELECTRONICS ]
