NTE2383 参数 Datasheet PDF下载

NTE2383

MOSFET

P–Channel Enhancement Mode,

High Speed Switch

(Compl to NTE2382)

Description:

The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,

high speed power switching applications such as switching regulators, converters, solenoid, and relay

drivers.

Features:

D

Lower R

DS(ON)

D

Improved Inductive Ruggedness

D

Fast Switching Times

D

Rugged Polysilicon Gate Cell Structure

D

Lower Input Capacitance

D

Extended Safe Operating Area

D

Improved High Temperature Reliability

Absolute Maximim Ratings:

Drain–Source Voltage (Note 1), V

DSS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Drain–Gate Voltage (R

GS

= 1MΩ, Note 1), V

DGR

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Gate–Source Voltage, V

GS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V

Continuous Drain Current, I

D

T

C

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A

T

C

= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A

Drain Current, Pulsed (Note 3), I

DM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A

Gate Current, Pulsed, I

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A

Single Pulsed Avalanvhe Energy (Note 4), E

AS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ

Avalanche Current, I

AS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A

Total Power Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C

Operating Junction Temperature Range, T

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W

Thermal Resistance, Case–to–Sink (Note 5), R

thCS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W

Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T

L

. . . . . . . . . . . . . . +300°C

Note

Note

Note

Note

Note

1.

2.

3.

4.

5.

T

J

= +25° to +150°C

Pulse Test: Pulse Width

≤

300µs, Duty Cycle

≤

2%.

Repetitive rating: Pulse width limited by max. junction temperature.

L = 8.5mH, V

DD

= 25V, R

G

= 25Ω, Starting T

J

= +25°C.

Mounting surface flat, smooth, and greased.