NTE2387
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain–Gate Voltage (R
GS
= 20kΩ), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Pulsed Drain Current, I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Continuous Drain Current, I
D
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Dissipation (T
C
= +25°C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30V, I
D
= 2.3A, V
GS
= 10V,
R
GS
= 50Ω, R
gen
= 50Ω
Ω
Ω
I
D
= 250µA, V
GS
= 0
V
GS
= 0, V
DS
= 800V, T
C
= +25°C
V
GS
= 0, V
DS
= 800V, T
C
= +125°C
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–Source On Resistance
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
V
DS
= 25V, I
D
= 1.5A
V
DS
= 25V, V
GS
= 0, f = 1MHz
3.0
–
–
–
–
–
–
–
4.3
1000
80
30
10
25
130
40
–
1250
120
50
25
40
150
60
mho
pf
pf
pf
ns
ns
ns
ns
V
DS
= 0, V
GS
=
±30V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 1.5A
800
–
–
–
2.1
–
–
2
0.1
10
3.0
2.7
–
20
1.0
100
4.0
3.0
V
µA
mA
nA
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Ω
NTE [ NTE ELECTRONICS ]
