NTE238 参数 Datasheet PDF下载

NTE238

Silicon NPN Transistor

Color TV, Horizontal Output

Description:

The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use

in deflection circuits.

Features:

D

V

CEX

= 1500V

D

Safe Operating Area @ 50µs = 20A, 400V

Absolute Maximum Ratings;

Collector–Emitter Voltage, V

CEX

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

Emitter–Base Voltage, V

EB

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current–Continuous, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Base Current–Continuous, I

B

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Emitter Current–Continuous, I

E

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Total Power Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W

Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), T

L

. . . . . . . . . +275°C

Electrical Characteristics:

(T

C

=+25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics

(Note 1)

Collector–Emitter Saturation Voltage

Base Emitter Saturation Voltage

SWITCHING CHARACTERISTICS

Fall Time

t

f

I

C

= 5A, I

B1

= 1A, L

B

= 8µH

–

0.4

1.0

µs

V

CE(sat)

V

BE(sat)

I

C

= 5A, I

B

= 1A

I

C

= 5A, I

B

= 1A

–

–

–

–

5.0

1.5

V

V

V

CEO(sus)

V

C

= 50mA, I

B

= 0

I

CES

I

EBO

V

CE

= 1500V, V

BE

= 0

V

BE

= 5V, I

C

= 0

750

–

–

–

–

–

–

0.25

0.1

V

mA

mA

Symbol

Test Conditions

Min

Typ

Max

Unit

Note 1. Pulse test: Pulse Width

≤

300µs, Duty Cycle = 2%.