NTE2406 参数 Datasheet PDF下载

NTE2406

Silicon NPN Transistor

General Purpose Amp, Surface Mount

(Compl to NTE2407)

Absolute Maximum Ratings:

(T

A

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Device Dissipation (FR–5 Board, Note 1), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C

Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R

thJA

. . . . . . . . . . . . . . 556°C/W

Total Device Dissipation (Alumina Substrate, Note 2), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C

Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R

thJA

. . . . . . . . 417°C/W

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°

to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°

to +150°C

Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).

Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEX

Emitter Cutoff Current

Base Cutoff Current

I

EBO

I

BL

I

C

= 10µA, I

E

= 0

I

C

= 10mA, I

B

= 0

I

E

= 10µA, I

C

= 0

V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

A

= +125°C

V

CE

= 60V, V

EB(off)

= 3V

V

EB

= 3V, I

C

= 0

V

CE

= 60V, V

EB(off)

= 3V

75

40

6

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

0.01

10

10

10

20

V

V

V

µA

µA

nA

nA

nA

Symbol

Test Conditions

Min

Typ

Max

Unit