NTE2412
Silicon NPN Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2413)
Description:
The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Capacitance
Symbol
Test Conditions
Min
300
300
5
–
–
–
56
50
–
Typ
–
–
–
–
–
–
–
100
3
Max
–
–
–
0.5
0.5
2.0
120
–
–
MHz
pF
Unit
V
V
V
µA
µA
V
V
(BR)CBO
I
C
= 50µA
V
(BR)EBO
I
E
= 50µA
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
V
CB
= 200V
V
EB
= 4V
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 30V, I
E
= 10mA,
f = 100MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100µA
NTE [ NTE ELECTRONICS ]
