NTE2416 参数 Datasheet PDF下载

NTE2416 (NPN) & NTE2417 (PNP)

Silicon Complementary Transistors

Digital

w

/2 Built–In Bias 22k Resistors

(Surface Mount)

Features:

D

Built–In Bias Resistors

D

Small SOT–23 Surface Mount Package

Applications:

D

Switching Circuits

D

Inverters

D

Interface Circuits

D

Driver

Absolute Maximum Ratings:

(T

A

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V

Collector Current, I

C

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Collector Dissipation, P

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Collector–Emitter Saturation Voltage

Current Gain–Bandwidth Product

NTE2416

NTE2417

Symbol

I

CBO

I

CEO

I

EBO

h

FE

Test Conditions

V

CB

= 40V, I

E

= 0

V

CE

= 40V, I

B

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 5V, I

C

= 10mA

Min

–

–

70

50

50

50

–

–

–

Typ

–

–

113

–

–

–

0.1

250

200

Max

0.1

0.5

150

–

–

–

0.3

–

–

V

V

V

MHz

MHz

Unit

µA

µA

µA

V

(BR)CBO

I

C

= 10µA, I

E

= 0

V

(BR)CBO

I

C

= 100µA, R

BE

=

∞

V

CE(sat)

I

C

= 10mA, I

B

= 0.5mA

f

T

V

CE

= 10V, I

C

= 5mA