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NTE247 参数 Datasheet PDF下载

NTE247图片预览
型号: NTE247
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅达林顿晶体管功率放大器 [Silicon Complementary Transistors Darlington Power Amplifier]
分类和应用: 晶体放大器晶体管达林顿晶体管功率放大器
文件页数/大小: 2 页 / 29 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE247的Datasheet PDF文件第2页  
NTE247 (NPN) & NTE248 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D
High DC Current Gain: h
FE
= 3500 Typ @ I
C
= 5A
D
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 100V Min @ 100mA
D
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 50V, I
E
= 0
V
CE
= 100V, V
BE(off)
= 1.5V
V
CE
= 100V, V
BE(off)
= 1.5V, T
A
= +150°C
V
BE
= 5V, I
C
= 0
100
1.0
0.5
5.0
2.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%