NTE249 (NPN) & NTE250 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D
High DC Current Gain: h
FE
= 3500 Typ @ I
C
= 10A
D
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
V
(BR)CEO
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
I
CER
Emitter Cutoff Current
I
EBO
V
CE
= 50V, I
E
= 0
V
CB
= 100V, R
BE
= 1kΩ
V
CB
= 100V, R
BE
= 1kΩ, T
A
= +150°C
V
BE
= 5V, I
C
= 0
100
–
–
–
–
–
–
–
–
–
–
3.0
1.0
5.0
5.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE [ NTE ELECTRONICS ]
