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NTE2582 参数 Datasheet PDF下载

NTE2582图片预览
型号: NTE2582
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管高速开关稳压器 [Silicon NPN Transistor High Speed Switching Regulator]
分类和应用: 晶体稳压器开关晶体管功率双极晶体管局域网
文件页数/大小: 2 页 / 26 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE2582的Datasheet PDF文件第2页  
NTE2582
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D
High Breakdown Voltage and High Reliability
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Collector Dissipation (T
A
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Collector Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width
300µs, Duty Cycle
10%.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1.6A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10mA
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
CE
= 10V, I
C
= 1.6A
V
CB
= 10V, f = 1MHz
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A
Min
20
10
10
Typ
20
160
Max
10
10
50
0.8
1.5
MHz
pF
V
V
Unit
µA
µA