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NTE270 参数 Datasheet PDF下载

NTE270图片预览
型号: NTE270
PDF下载: 下载PDF文件 查看货源
内容描述: 硅互补达林顿晶体管功率放大器,开关 [Silicon Complementary Transistors Darlington Power Amp, Switch]
分类和应用: 晶体开关放大器晶体管达林顿晶体管功率放大器
文件页数/大小: 2 页 / 28 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE270的Datasheet PDF文件第2页  
NTE270 (NPN) & NTE271 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D
High DC Current Gain: h
FE
= 1000 Min @ I
C
= 5A, V
CE
= 4V
D
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 100V Min @ 30mA
D
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7°C/W
Note 1. Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
CEO(sus)
I
C
= 30mA, I
B
= 0, Note 2
I
CEO
I
CBO
I
EBO
V
CE
= 50V, I
B
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V
100
2.0
1.0
2.0
V
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle
2%.