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NTE2716 参数 Datasheet PDF下载

NTE2716图片预览
型号: NTE2716
PDF下载: 下载PDF文件 查看货源
内容描述: 集成电路NMOS , 16K紫外线可擦除PROM [Integrated Circuit NMOS, 16K UV Erasable PROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 5 页 / 37 K
品牌: NTE [ NTE ELECTRONICS ]
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NTE2716
Integrated Circuit
NMOS, 16K UV Erasable PROM
Description:
The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a
24–Lead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
D
Single 5V Power Supply
D
Automatic Power–Down Mode (Standby)
D
Organized as 2048 Bytes of 8Bits
D
TTL Compatible During Read and Program
D
Access Time: 350ns
D
Output Enable Active Level is User Selectable
Absolute Maximum Ratings:
(Note 1)
All Input or Output Voltages (with respect to V
SS
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to –0.3V
V
PP
Supply Voltage (with respect to V
SS
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 to –0.3V
Temperature Under Bias (V
PP
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +80°C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range. T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-
eration should be restricted to “Recommended Operating Conditions”. Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.