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NTE278 参数 Datasheet PDF下载

NTE278图片预览
型号: NTE278
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管宽带射频放大器 [Silicon NPN Transistor Broadband RF Amp]
分类和应用: 晶体射频放大器小信号双极晶体管射频小信号双极晶体管
文件页数/大小: 2 页 / 26 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE278的Datasheet PDF文件第2页  
NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D
Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D
High Current–Gain Bandwidth Product: f
T
= 1200MHz Min @ I
C
= 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (T
C
= +75°C, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. Total Device Dissipation at T
A
= +25°C is 1 Watt.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 5mA, I
B
= 0
V
CER(sus)
I
C
= 5mA, R
BE
= 10Ω, Note 2
Collector Cutoff Current
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 15V, I
B
= 0
V
CE
= 15V, V
BE
= –1.5V, T
C
= +150°C
V
CE
= 35V, V
BE
= –1.5V
V
BE
= 3V, I
C
= 0
20
40
20
5
5
100
V
V
µA
mA
mA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.