NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (I
B
= 0), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
Collector–Emitter Voltage (V
BE
= 0), V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (t
p
≤
10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (T
C
≤
+25°C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Voltage
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Current Gain–Bandwidth Product
Second Breakdown Collector Current
Symbol
I
CES
I
EBO
V
CBO
V
CEO(su
s)
Test Conditions
V
CEV
= 800V, V
BE
= 0
V
EB
= 8V, I
C
= 0
I
C
= 1mA, I
E
= 0
I
C
= 100mA, I
B
= 0, Note 1
I
C
= 8A, I
B
= 2.5A, Note 1
I
C
= 8A, I
B
= 2.5A, Note 1
V
CE
= 10V, I
C
= 2.5A, Note 1
V
CE
= 10V, I
C
= 500mA
V
CE
= 25V, Note 2
Min
–
–
800
325
–
–
15
–
4
Typ
–
–
–
–
–
–
–
10
–
Max
1
1
–
–
3.3
2.2
–
–
–
Unit
mA
mA
V
V
V
V
V
CE(sat)
V
BE(sat)
h
FE
f
T
I
S/b
MHz
A
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
NTE [ NTE ELECTRONICS ]
