NTE293 参数 Datasheet PDF下载

NTE293 (NPN) & NTE294 (PNP)

Silicon Complementary Transistors

Audio Amplifier and Driver

Description:

The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type

package designed for use in low–frequency power amplification and drive applications.

Features:

D

Low Collector–Emitter Saturation Voltage

Absolute Maximum Ratings:

(T

A

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, I

C

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A

Collector Power Dissipation, P

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Symbol

Test Conditions

Min

60

50

5

–

120

50

–

–

–

–

Typ

–

–

–

–

–

100

0.2

0.85

200

11

Max

–

–

–

0.1

240

–

0.4

1.2

–

20

V

V

MHz

pF

Unit

V

V

V

µA

V

(BR)CBO

I

C

= 10µA, I

E

= 0

V

(BR)CEO

I

C

= 2mA, I

B

= 0

V

(BR)EBO

I

E

= 10µA, I

C

= 0

I

CBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

V

CB

= 20V, I

E

= 0

V

CE

= 10V, I

C

= 500mA, Note 2

V

CE

= 5V, I

B

= 1A, Note 2

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Current–Gain Bandwidth Product

Collector Output Capacitance

I

C

= 500mA, I

B

= 50mA, Note 2

I

C

= 500mA, I

B

= 50mA, Note 2

V

CB

= 10V, I

E

= 50mA, f = 200MHz

V

CB

= 10V, I

e

= 0, f = 1MHz

Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h

FE

) matched to within

10% of each other.

Note 2. Pulse measurement.