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NTE2973 参数 Datasheet PDF下载

NTE2973图片预览
型号: NTE2973
PDF下载: 下载PDF文件 查看货源
内容描述: MOSFET N沟道增强模式的高速开关 [MOSFET N-Channel, Enhancement Mode High Speed Switch]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲局域网
文件页数/大小: 2 页 / 24 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE2973的Datasheet PDF文件第2页  
NTE2973
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D
SMPS
D
DC–DC Converter
D
Battery Charger
D
Power Supply of Printer
D
Copier
D
HDD, FDD, TV, VCR
D
Personal Computer
Absolute Maximum Ratings:
(T
C
= +25°C unless otherwise specified)
Drain–Source Voltage (V
GS
= 0V), V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage (V
DS
= 0V), V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R
th(ch–c)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics:
(T
ch
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
Symbol
Test Conditions
Min
900
±30
2.0
9
Typ
3.0
0.63
4.41
15
Max
±10
1.0
4.0
0.85
5.95
Unit
V
V
µA
mA
V
V
S
V
(BR)DSS
V
DS
= 0V, I
D
= 1mA
V
(BR)GSS
V
DS
= 0V, I
G
=
±100µA
I
GSS
I
DSS
V
GS(th)
R
DS(on)
V
DS(on)
|y
fs
|
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 900V, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 7A
V
GS
= 10V, I
D
= 7A
V
GS
= 10V, I
D
= 7A