NTE2984
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Logic Level Gate Drive
D
R
DS
(on) Specified at V
GS
= 4V & 5V
D
+175°C Operating Temperature
D
Fast Switching
D
Ease of Paralleling
D
Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 5V)
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40W/°C
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10V
Single Pulsed Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
. . . . . . . . . . +300°C
Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf•in (1.1 N•m)
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
. . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
. . . . . . . . . . . . . . . . . . . . . 62K/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444µH, V
DD
= 25V, R
G
= 25Ω, Starting T
J
= +175°C.
Note 3. I
SD
≤
17A, di/dt
≤
140A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
+175°C.