NTE2986 参数 Datasheet PDF下载

NTE2986

Logic Level MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D

Dynamic dv/dt Rating

D

Logic Level Gate Drive

D

R

DS

(on) Specified at V

GS

= 4V & 5V

D

+175°C Operating Temperature

D

Fast Switching

D

Ease of Paralleling

D

Simple Drive Requirements

Absolute Maximum Ratings:

Drain Current, I

D

Continuous (V

GS

= 5V)

T

C

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A

T

C

= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A

Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A

Total Power Dissipation (T

C

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C

Gate–Source Voltage, V

GS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±10V

Single Pulsed Avalanche Energy (Note 2), E

AS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ

Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C

Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T

L

. . . . . . . . . . +300°C

Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf•in (1.1 N•m)

Thermal Resistance:

Maximum Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R

thCS

. . . . . . . 0.5K/W

Maximum Junction–to–Ambient (Free Air Operation), R

thJA

. . . . . . . . . . . . . . . . . . . . . 62K/W

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 2. L = 179µH, V

DD

= 25V, R

G

= 25Ω, I

AS

= 51A, Starting T

J

= +175°C.

Note 3. I

SD

≤

51A, di/dt

≤

250A/µs, V

DD

≤

V

(BR)DSS

, T

J

≤

+175°C.