NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D
Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D
Minimum Light Current: 8mH @ H = 5mW/cm
2
D
External Base for Added Control
D
Annular Passivated Structure for Stability and Reliability
D
Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Total Device Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Emitter–Collector Breakdown Voltage
Optical Characteristics
Light Current
Photo Current Rise Time
Photo Current Fall Time
I
L
t
r
t
f
V
CC
= 5V, R
L
= 100Ω, Note 1
R
L
= 100Ω, I
L
= 1mA (Peak),
Note 2
8
–
–
–
15
15
–
–
–
mA
µs
µs
I
CEO
V
CC
= 10V, H
∼
0
–
80
5
–
–
–
100
–
–
nA
V
V
V
(BR)CBO
I
C
= 100µA
V
(BR)ECO
I
E
= 100µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ
∼ µm)
with a pulse width equal to or greater than 10µs,
I
L
= 1mA Peak.
NTE [ NTE ELECTRONICS ]
