NTE313
Silicon NPN Transistor
High Gain, Low Noise,
VHF Mixer and VHF/RF Amp
Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier
applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Total Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Maximum Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Current–Gain Bandwidth Product
Output Capacitance
Noise Figure
Power Gain
AGC Current
Symbol
I
CBO
h
FE
f
T
C
ob
NF
PG
I
AGC
Test Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 10V, I
E
= –2mA
V
CB
= 10V, I
E
= 0, f = 1MHz
I
E
= –2mA, f = 200MHz
I
E
= –2mA, f = 200MHz
PG = –30dB
Min
–
20
400
–
–
20
–
Typ
–
60
530
0.5
2.5
23
–9
Max
0.2
200
–
1.0
3.3
–
–11
MHz
pF
dB
dB
mA
Unit
µA
NTE [ NTE ELECTRONICS ]
