NTE316 参数 Datasheet PDF下载

NTE316

Silicon NPN Transistor

High Gain, Low Noise Amp

Features:

D

High Current Gain–Bandwidth Product

D

Low Noise Figure

D

High Power Gain

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Continuous Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Continuous Device Dissipation (T

A

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics

DC Current Gain

Dynamic Characteristics

Current Gain–Bandwidth Product

Collector–Base Capacitance

Small–Signal Current Gain

Collector–Base Time Constant

Noise Figure

Functional Test

Common–Emitter Amplifier Power Gain

G

pe

V

CE

= 5V, I

C

= 2mA, f = 450MHz

15

–

–

dB

f

T

C

cb

h

fe

r

b

’C

c

NF

V

CE

= 5V, I

C

= 10mA, f = 100MHz

V

CB

= 10V, I

E

= 0, f = 1kHz

V

CE

= 5V, I

C

= 2mA, f = 1kHz

V

CE

= 5V, I

E

= 2mA, f = 31.8MHz

V

CE

= 5V, I

C

= 2mA, R

S

= 50Ω,

f = 450MHz

1400

–

25

2

–

–

0.8

–

–

–

–

1.0

250

12

4.5

ps

dB

MHz

pF

h

FE

V

CE

= 5V, I

C

= 2mA

25

–

250

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

C

= 5mA, I

B

= 0

I

C

= 0.1mA, I

E

= 0

I

E

= 0.1mA, I

C

= 0

V

CB

= 5V, I

E

= 0

15

30

3.5

–

–

–

–

–

–

–

–

10

V

V

V

nA

Symbol

Test Conditions

Min

Typ

Max

Unit