NTE319P 参数 Datasheet PDF下载

NTE319P

Silicon NPN Transistor

VHF Amp

w

/Forward AGC

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Power Dissipation (T

A

= +25°C), P

T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 1/16”

±1/32”

from case, 10sec), T

L

. . . . . . . . . . . . . . . +230°C

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Collector Saturation Voltage

Current Gain–Bandwidth Product

Power Gain

Capacitance

Noise Figure

Symbol

Test Conditions

Min

20

3

–

20

–

20

300

27

–

–

Typ Max

–

–

–

80

–

–

–

29

2.7

–

–

50

220

2.75

–

500

–

5.0

V

V

MHz

dB

pF

dB

Unit

V

V

nA

V

(BR)CBO

I

C

= 100µA, I

E

= 0

V

(BR)EBO

I

E

= 100µA, I

C

= 0

I

CBO

h

FE

V

CE(sat)

f

T

G

pe

C

cb

NF

V

CB

= 20V, I

E

= 0

I

C

= 2mA, V

CE

= 10V

I

C

= 10mA, I

B

= 5mA

I

C

= 2mA, V

CE

= 10V,

f = 100MHz

V

BE

= 2V, f = 45MHz

I

E

= 0, V

CB

= 10V, f = 1MHz

V

BE

= 2V, f = 45MHz

Collector–Emitter Sustaining Voltage V

CEO(sus)

I

C

= 1mA, I

B

= 0

0.13 0.22