NTE323 参数 Datasheet PDF下载

NTE323 (PNP) & NTE324 (NPN)

Silicon Complementary Transistors

General Purpose

Description:

The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a

TO39 type package designed for use as drivers for high power transistors in general purpose amplifier

and switching circuits.

Absolute Maximum Ratings:

Collector–Base Voltage (I

E

= 0), V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Emitter–Base Voltage (I

C

= 0), V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Base Current, I

B

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Total Power Dissipation, P

tot

T

C

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

T

A

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4°C/W

Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W

Electrical Characteristics:

(T

C

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Symbol

I

CBO

I

CEO

I

CEV

Test Conditions

V

CB

= 120V, I

E

= 0

V

CE

= 80V, I

B

= 0

V

CE

= 120V, V

BE

= –1.5V

V

CE

= 120V, V

BE

= –1.5V, T

C

= +150°C

V

EB

= 4V, I

C

= 0

I

C

= 250mA, I

B

= 25mA, Note 1

I

C

= 500mA, I

B

= 50mA, Note 1

I

C

= 1A, I

B

= 200mA, Note 1

Min

–

–

–

–

–

120

–

–

–

Typ

–

–

–

–

–

–

–

–

–

Max Unit

1

10

1

1

1

–

0.6

1.0

2.0

µA

µA

µA

mA

µA

V

V

V

V

Emitter Cutoff Current

Collector–Emitter Sustaining Voltage

Collector–Emitter Saturation Voltage

I

EBO

V

CE(sat)

V

CEO(sus)

I

C

= 10mA, I

B

= 0, Note 1

Note 1. Pulse Duration = 300µs, Duty Cycle

≤

2%.