Electrical Characteristics (Cont’d):
(T
C
= +25°C unless otherwise specified)
Parameter
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 10A
V
CE
= 2V, I
C
= 25A
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
t
r
t
s
t
f
I
C
= 10A, I
B
= 1.0A
I
C
= 25A, I
B
= 2.5A
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Switching Characteristics
Rise Time
Storage Time
Fall Time
V
CC
= 80V, I
C
= 10A, I
B1
= 1A,
V
BE(off)
= 6V
V
CC
= 80V, I
C
= 10A, I
B1
= I
B2
=1A
–
–
–
–
–
–
0.3
1.0
0.25
µ
µs
µs
V
CE
= 10V, I
C
= 1A, f = 10MHz,
Note 2
V
CB
= 10V, I
E
= 0, f = 0.1MHz
40
–
–
–
–
300
MHz
pF
I
C
= 10A, I
B
= 1.0A
I
C
= 25A, I
B
= 2.5A
I
C
= 10A, V
CE
= 2V
50
30
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
120
–
1.0
1.8
1.8
2.5
1.8
V
V
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Note 2. f
T
= |h
fe
|
•
f
test
.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
NTE [ NTE ELECTRONICS ]
