NTE3323
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D
High Input Impedance
D
High Speed
D
Low Saturation Voltage
D
Enhancement Mode
Applications:
D
High Power Switching
D
Motor Control
Absolute Maximum Raings:
(T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Gate–Emitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V
Collector Current, I
C
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Collector Power Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Gate Leakage Current
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
Gate–Emitter Cutoff Voltage
Collector–Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn–On Time
Fall Time
Turn–Off Time
Symbol
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
Test Conditions
V
GE
=
±20V,
V
CE
= 0
V
CE
= 1200V, V
GE
= 0
I
C
= 25mA, V
CE
= 5V
I
C
= 25A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 600V
Min
–
–
1200
3.0
–
–
–
–
–
–
Typ
–
–
–
–
3.0
3200
0.30
0.40
0.25
0.80
Max
±500
1.0
–
6.0
4.0
–
0.60
0.80
0.50
1.50
Unit
nA
mA
V
V
V
pF
µs
µs
µs
µs
V
(BR)CES
I
C
= 2mA, V
GE
= 0
NTE [ NTE ELECTRONICS ]
