NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (I
E
= 0), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (I
B
= 0), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage (I
C
= 0), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (T
C
≤
+25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Max
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
I
EBO
Test Conditions
I
E
= 0, V
CB
= 100V
I
E
= 0, V
CB
= 100V, T
C
= +150°C
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Voltage
Collector–Emitter Saturation
Voltage
I
B
= 0, V
CE
= 50V
I
C
= 0, V
EB
= 5V
Min
–
–
–
–
100
–
–
Typ
–
–
–
–
–
–
–
Max
500
5
1
1
–
1
3
Unit
µA
mA
mA
mA
V
V
V
V
CEO(sus)
I
B
= 0, I
C
= 100mA, Note 1
V
CE(sat)
I
C
= 5A, I
B
= 0.5A, Note 1
I
C
= 10A, I
B
= 2.5A, Note 1