NTE341 参数 Datasheet PDF下载

NTE341

Silicon NPN Transistor

RF Power Output

Description:

The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications.

The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead

for high gain performance.

Features:

D

175MHz

D

12.5 Volts

D

P

OUT

= 4W Minimum

D

G

P

= 12dB

D

Grounded Emitter

Absolute Maximum Ratings:

(T

C

= +25°C unless otherwise specified)

Collector−Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector−Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Collector−Emitter Voltage, V

CES

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Emitter−Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA

Total Device Dissipation, P

tot

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W

Operating Junction Temperature, T

j

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperatures Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65°

to +200°C

Thermal Resistance, Junction−to−Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9°C/W

Electrical Characteristics:

(T

C

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector−Emitter Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics

DC Current Gain

Dynamic Characteristics

Output Power

Common−Emitter Amplifier Power Gain

Output Capacitance

P

OUT

G

PE

C

ob

V

CE

= 12.5V, f = 175MHz

V

CE

= 12.5V, f = 175MHz

V

CE

= 15V, f = 1MHz

4

12

−

−

−

180

−

−

230

W

dB

pF

h

FE

V

CE

= 5V, I

C

= 50mA

10

−

100

V

(BR)CEO

I

C

= 10mA, I

B

= 0

V

(BR)CES

I

C

= 5mA, V

BE

= 0

V

(BR)EBO

I

C

= 0, I

E

= 1mA

I

CBO

V

CB

= 15V, I

E

= 0

18

36

4

−

−

−

−

−

−

−

−

250

V

V

V

µA

Symbol

Test Conditions

Min

Typ

Max Unit