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NTE362 参数 Datasheet PDF下载

NTE362图片预览
型号: NTE362
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管射频功率 [Silicon NPN Transistor RF Power]
分类和应用: 晶体射频双极晶体管放大器
文件页数/大小: 2 页 / 72 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE362的Datasheet PDF文件第2页  
NTE362
Silicon NPN Transistor
RF Power
Description:
The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial
and commercial FM equipment operating in the 400 to 960MHz range.
Features:
D
D
D
D
Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
Minimum Gain = 9.0dB
Efficiency = 60% Minimum
RF ballasting provides protection against device damage due to load mismatch
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector−Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector−Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V
Total Device Dissipation (T
C
= +25°C, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65°
to +200°C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in−lbs
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly use 5 in−lbs.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 50mA, I
B
= 0
V
(BR)CES
I
C
= 50mA, V
BE
= 0
V
(BR)EBO
I
E
= 1.0mA, I
C
= 0
I
CES
I
CBO
V
CE
= 15V, V
BE
= 0, T
C
= +55°C
V
CB
= 15V, I
E
= 0
16
36
4.0
0.2
10
1.0
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit