NTE382 (NPN) & NTE383 (PNP)
Silicon Complementary Transistors
Audio Frequency Driver
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test Conditions
I
C
= 10µA, I
E
= 0
I
C
= 1mA, R
BE
=
∞
I
E
= 10µA, I
C
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 5V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Current Gain–Bandwidth Product
Capacitance
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 150mA
V
CE
= 5V, I
C
= 150mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
100
5
–
160
30
–
–
–
–
Typ
–
–
–
–
–
–
–
–
140
20
Max Unit
–
–
–
10
320
–
1.0
1.5
–
–
V
V
MHz
pF
V
V
V
µA