NTE395 参数 Datasheet PDF下载

NTE395

Silicon PNP Transistor

Wide Band Linear Amplifier

Absolute Maximum Ratings:

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Power Dissipation (T

A

= +25°C), P

tot

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW

Power Dissipation (T

C

= +25°C), P

tot

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW

Operating Junction Temperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485°C/W

Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775°C/W

Electrical Characteristics:

(T

A

= +25°C unless otherwise specified)

Parameter

Collector–Base Cutoff Current

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Static Forward Current Transfer Ratio

Base–Emitter Voltage

Knee Voltage

Transition Frequency

Maximum Oscillation Frequency

Output Capacitance

Symbol

I

CBO

Test Conditions

V

CB

= 15V, I

E

= 0

Min

–

30

25

3

20

–

–

1.4

–

–

Typ

–

–

–

–

–

0.75

0.8

2.3

6.5

1.1

Max

50

–

–

–

–

–

–

–

–

–

V

V

GHz

GHz

pF

Unit

nA

V

V

V

V

(BR)CBO

I

C

= 100µA, I

E

= 0

V

(BR)CEO

I

C

= 5mA, I

B

= 0

V

(BR)EBO

I

E

= 10µA, I

C

= 0

h

21E

V

BE

V

CEK

f

T

f

C

22b

V

CE

= 10V, I

C

= 10mA, Note 1

V

CE

= 10V, I

C

= 10mA

I

C

= 20mA, Note 2

V

CE

= 15V, I

C

= 10mA

V

CE

= 15V, I

C

= 10mA

V

CB

= 15V, I

E

= 0, f = 1MHz

Note 1. Pulsed.

Note 2. V

CEK

tested with I

C

= 100ma and I

B

= values for which I

C

= 110mA at V

CE

= 1V.