NTE452
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package de-
signed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 1µs, V
DS
= 0
I
GSS
V
GS(off)
V
GS
V
GS(f)
I
DSS
|Y
fs
|
Y
fs(real)
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +150°C
Gate–Source Cutoff Voltage
Gate–Source Voltage
Gate–Source Forward Voltage
ON Characteristics
(Note 1)
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Real Part of Forward Transfer
Admittance
V
DS
= 15V, V
GS
= 0, f = 1kHz, Note 1
V
DS
= 15V, V
GS
= 0, f = 400MHz
4500
4000
–
–
7500
µmhos
–
µmhos
V
DS
= 15V, V
GS
= 0
5
–
15
mA
I
D
= 1nA, V
DS
= 15V
I
D
= 0.5mA, V
DS
= 15V
I
G
= 1mA, V
DS
= 0
30
–
–
–
1.0
–
–
–
–
–
–
–
–
100
200
6
5.5
1.0
V
pA
pA
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
1%.
NTE [ NTE ELECTRONICS ]
