Electrical Characteristics:
(T
A
= 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Drain–Source Breakdown
Voltage
Gate 1= Source Breakdown
Voltage (Note 1)
Gate 2–Source Breakdown
Voltage (Note 1)
Gate 1 to Source Cutoff Voltage
Gate 2 to Source Cutoff Voltage
Gate 1 Leakage Current
V
(BR)DSX
I
D
= 10µAdc, V
5
= 0,
V
GIS
= V
G25
= 5.0Vdc
20
±6.0
±5.0
–0.5
–0.2
–
–
–
–
–
±12
±12
–1.5
–1.4
±0.04
–
±0.05
–
–
±30
±30
–5.0
–5.0
±10
–10
±10
–10
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
µAdc
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)G1SO
I
G1
=
±10mAdc,
V
GIS
= V
DS
= 0
V
(BR)G2SO
I
G2
=
±10mAdc,
V
G15
= V
D5
= 0
V
GIS(off)
V
G2S(off)
I
G1SS
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= 20µAdc
V
DS
= 15Vdc, V
G15
= 0,
I
D
= 20µAdc
V
GIS
=
±5.0Vdc,
V
G2S
= V
DS
= 0
V
G2S
= –5.0Vdc, V
G2S
= V
DS
= 0,
T
A
= 150°C
Gate 2 Leakage Current
I
G2SS
V
G2S
=
±5.0Vdc,
V
GIS
= V
DS
= 0
V
G2S
= –5.0Vdc, V
GIS
= V
DS
= 0,
T
A
= 150°C
ON CHARACTERISTICS
Zero–Gate Voltage Drain
Current (Note 2)
Forward Transfer Admittance
(Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
FUNCTIONAL CHARACTERISTICS
Noise Figure
Common Source Power Gain
Bandwidth
Gain Control Gate Supply
Voltage (Note 4)
NF
G
ps
BW
V
GG(GC)
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
V
DD
= 18Vdc,
∆G
ps
= –30dB,
f = 200MH
Z
–
15
5.0
0
1.8
20
–
–1.0
4.5
25
9.0
–3.0
dB
dB
MH
Z
Vdc
I
DSS
V
DS
= 15Vdc, V
GIS
= 0,
V
G25
= 4.0Vdc
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
V
GIS
= 0, f = 1.0kH
Z
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= I
DSS
, f = 1.0MH
Z
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= I
DSS
, f = 1.0MH
Z
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= 10mAdc, f = 1.0MH
Z
6.0
13
30
mAdc
SMALL–SIGNAL CHARACTERISTICS
|y
fe
|
C
iss
C
oss
C
rss
8.0
–
–
0.005
12.8
3.3
1.7
0.014
20
–
–
0.03
mmhos
pF
pF
pF
Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures
that the gate–voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating.
Note 4.
∆G
ps
is defined as the change in G
pe
from the values at V
GG
= 7.0V power gain conversion
NTE [ NTE ELECTRONICS ]
