NTE455
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
(MOSFET)
Description:
The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF
TV tuners. This device is especially recommended for use in half wave length resonator type tuners.
Features:
D
Low Reverse Transfer Capacitance: C
rss
= 0.02pF Typ
D
High Power Gain: G
ps
= 18dB Typ
D
Low Noise Figure: NF = 3.8dB Typ
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Drain−Source Voltage, V
DSX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate1−Source Voltage, V
G1S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10V
Gate2−Source Voltage, V
G2S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10V
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Maximum Channel Temperature, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55°
to +125°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Zero−Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Gate−Source Cutoff Voltage
Gate Reverse Current
Drain−Source Breakdown Voltage
Symbol
I
DSS
|Y
fs
|
C
iss
C
oss
C
rss
G
ps
NF
V
G2S(off)
I
G1SS
I
G2SS
BV
DSX
V
DS
= 0, V
G1S
=
±10V,
V
G2S
= 0
V
DS
= 0, V
G2S
=
±10V,
V
G1S
= 0
V
G1S
= V
G2S
=
−2V,
I
D
= 10µA
Test Conditions
V
DS
= 10V, V
G2S
= 4V, V
G1S
= 0
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 1kHz
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 1MHz
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 1MHz
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 1MHz
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 900MHz
V
DS
= 10V, V
G2S
= 4V, I
D
= 10mA, f = 900MHz
Min
0.5
18
1.5
0.5
−
15
−
−
−
−
−
20
Typ
−
22
2.0
1.1
18
3.8
−
−
−
−
24
Max Unit
8.0
−
3.5
1.5
22
5.5
2.0
−0.7
±20
±20
−
mA
ms
pF
pF
pF
dB
dB
V
V
nA
nA
V
0.02 0.03
V
G1S(off)
V
DS
= 10V, V
G2S
= 4V, I
D
= 10µA
NTE [ NTE ELECTRONICS ]
