NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/°C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate–Voltage Drain Current
V
(BR)DSX
I
D
= –10µA, V
GS
= 0
I
DSS
I
GSS
V
GS(Th)
V
DS(on)
I
D(on)
V
DS
= –10V, V
GS
= 0, T
A
= +25°C
V
DS
= –10V, V
GS
= 0, T
A
= +150°C
Gate Reverse Current
ON Characteristics
Gate Threshold Voltage
Drain–Source On–Voltage
On–State Drain Current
V
DS
= –10V, I
D
= –10µA
I
D
= –2mA, V
GS
= –10V
V
GS
= –10V, V
DS
= –10V
–1
–
–3
–
–
–
–5
–1
–
V
V
mA
V
GS
=
±30V,
V
DS
= 0
–25
–
–
–
–
–
–
–
–
–10
–10
±10
V
nA
µA
pA
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE [ NTE ELECTRONICS ]
