NTE47 参数 Datasheet PDF下载

NTE47

Silicon NPN Transistor

High Gain, Low Noise Amp

Absolute Maximum Ratings:

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V

Continuous Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Total Device Dissipation (T

A

= +25°C), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W

Thermal Resistance, Junction–to–Ambient (Note 1), R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W

Note 1 R

thJA

is measured with the device soldered into a typical printed circuit board.

Electrical Characteristics:

(T

A

= +25°C unless otherwise noted)

Parameter

OFF Characteristics

Collector–Emitter Breakdown Voltage

Colletor–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics

(Note 2)

DC Current Gain

h

FE

V

CE

= 5V, I

C

= 10µA

V

CE

= 5V, I

C

= 100µA

V

CE

= 5V, I

C

= 1mA

V

CE

= 5V, I

C

= 10mA

Collector–Emitter Saturation Voltage

V

CE(sat)

V

BE(on)

I

C

= 10mA, I

B

= 0.5mA

I

C

= 50mA, I

B

= 0.5mA

Base–Emitter ON Voltage

V

CE

= 5V, I

C

= 1mA

400

500

500

500

–

–

–

580

850

1100

1150

–

0.08

0.6

–

–

–

–

0.2

0.3

0.7

V

V

V

V

(BR)CEO

I

C

= 10mA, I

B

= 0, Note 2

V

(BR)CBO

I

C

= 100µA, I

E

= 0

V

(BR)EBO

I

E

= 10µA, I

C

= 0

I

CBO

V

CB

= 30V, I

E

= 0

45

45

6.5

–

–

–

–

1.0

–

–

–

50

V

V

V

nA

Symbol

Test Conditions

Min

Typ

Max

Unit

Note 2 Pulse test: Pulse Width

≤

300µs, Duty Cycle

≤

2.0%