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NTE480 参数 Datasheet PDF下载

NTE480图片预览
型号: NTE480
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管射频输出功率宽带放大器, PO = 40W @ 512MHz [Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz]
分类和应用: 晶体放大器晶体管射频
文件页数/大小: 2 页 / 25 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE480的Datasheet PDF文件第2页  
NTE480
Silicon NPN Transistor
RF Power Output for Broadband Amp,
P
O
= 40W @ 512MHz
Description:
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-
tors to withstand infinite VSWR under operating conditions.
Features:
D
Designed for UHF Commercial Equipment
D
38W with Greater than 5.8dB Gain
D
Withstands 20:1 VSWR Min., All Phase Angles
D
Tuned Q Technology
D
Diffused Emitter Resistors
Absolute Maximum Ratings:
(T
C
= +25°C unless othrwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Device Dissipation (At +25°C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Electrical Characteristic:
(T
C
= +25°C unless otherwise specified)
Parameter
Static
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0, Note 1
V
(BR)CES
I
C
= 15mA, V
BE
= 0, Note 1
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V
(BR)EBO
I
E
= 5mA, i
C
= 0
I
CES
h
FE
V
CE
= 12.5V, V
BE
= 0
V
CE
= 5V, I
C
= 1A
16
36
4
20
5
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulsed through 25mH indicator.