NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V
Drain Current (Note 1), I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics
(Note 2)
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain Cutoff Current
Forward Transconductance
Small–Signal Characteristics
Input Capacitance
Switching Characteristics
Turn–On Time
Turn–Off Time
t
on
t
off
I
D
= 200mA
I
D
= 200mA
–
–
4
4
10
10
ns
ns
C
iss
V
DS
= 10V, V
GS
= 0, f = 1MHz
–
–
60
pF
V
GS(Th)
r
DS
(on)
I
D(off)
g
fs
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 200mA
V
DS
= 25V, V
GS
= 0
V
DS
= 10V, I
D
= 250mA
0.8
–
–
–
2.0
1.8
–
200
3.0
5.0
0.5
–
V
V
(BR)DSS
V
GS
= 0, I
D
= 100µA
I
GSS
V
GS
= 15V, V
DS
= 0
60
–
90
0.01
–
10
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Ω
µA
mmhos
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
NTE [ NTE ELECTRONICS ]
