NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (R
GS
= 1MΩ), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±40V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, R
th (JA)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5°C/W
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
. . . . . . . . . . . . +300°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
(BR)DSS
I
GSSF
V
GS(Th)
r
DS(on)
V
DS(on)
I
d(on)
g
fs
V
DS
= 48V, V
GS
= 0
V
DS
= 48V, V
GS
= 0, T
J
= +125°C
Drain–Source Breakdown Voltage
Gate–Body Leakage Current, Forward
ON Characteristics
(Note 1)
Gate Threshold Voltage
Static Drain–Source ON Resistance
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
Drain–Source ON–Voltage
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
ON–State Drain Current
Forward Transconductance
V
GS
= 4.5V, V
DS
= 10V
V
DS
= 10V, I
D
= 200mA
0.8
–
–
–
–
75
100
–
–
–
–
–
–
–
3.0
5.0
6.0
2.5
0.45
–
–
V
Ω
Ω
V
V
mA
µmhos
V
GS
= 0, I
D
= 10µA
V
GSF
= 15V, V
DS
= 0
–
–
60
–
–
–
–
–
1.0
1.0
–
–10
µA
mA
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
NTE [ NTE ELECTRONICS ]
